p age:p - p 1 plastic - encapsulate m osfets guangdong hottech industrial co,. ltd. fe a tures n - channel mosfet sot - 23 1.gate 2.source 3.drain s g d BSS138 absolute maximum ratings (ta=25 o c, unless otherwise noted) ? high density cell design for extremely low r ds(on) ? rugged and reliable ? compact industry standard sot-23 surface mount package symbol parameter ratings units v dss drain-source voltage 50 v v gss gate-source voltage 20 v i d drain current ? continuous (note 1) 0.22 a ? pulsed 0.88 maximum power dissipation (note 1) 0.36 w p d derate above 25 c 2.8 mw/ c t j , t stg operating and storage junction temperature range ? 55 to +150 c t l maximum lead temperature for soldering purposes, 1/16? from case for 10 seconds 300 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1) 350 c/w package marking and ordering information device marking device reel size tape width quantity ss BSS138 7?? 8mm 3000 units
p age:p - p 2 plastic - encapsulate m osfets guangdong hottech industrial co,. ltd. symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 50 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a,referenced to 25 c 72 mv/ c i dss zero gate voltage drain current v ds = 50 v, v gs = 0 v 0.5 a v ds = 30 v, v gs = 0 v 100 na i gss gate?body leakage. v gs = 20 v, v ds = 0 v 100 na on characteristics (note 2) v g s ( t h ) ga t e t hr e s hold v o l t age v ds = v g s , i d = 1 m a 0 . 8 1 . 3 1 . 6 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 1 ma,referenced to 25 c ?2 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 0.22 a v gs = 4.5 v, i d = 0.22 a 3.5 6.0 ? i d(on) on?state drain current v gs = 10 v, v ds = 5 v 0.2 a g fs forward t ran sc ond u c t a n c e v ds = 10 v , i d = 0 . 22 a 0 . 12 s dynamic characteristics c iss input capacitance 27 pf c oss output capacitance 13 pf c rss reverse transfer capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz 6 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 9 ? switching characteristics (note 2) t d(on) turn?on delay time 2.5 5 ns t r turn?on rise time 9 18 ns t d(off) turn?off delay time 20 36 ns t f turn?off fall time v dd = 30 v, i d = 0.29 a, v gs = 10 v, r gen = 6 ? 7 14 ns q g total gate charge 1.7 2.4 nc q gs gate?source charge 0.1 nc q gd gate?drain charge v ds = 25 v, i d = 0.22 a, v gs = 10 v 0.4 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 0.22 a v sd drain?source diode forward voltage v gs = 0 v, i s = 0.44 a (note 2) 0.8 1.4 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 350c/w when mounted on a minimum pad.. scale 1 : 1 on letter size paper 2. pulse test: pulse width 300 s, duty cycle 2.0% electrical characteristics (ta=25c, unless otherwise noted) BSS138
p age:p - p 3 plastic - encapsulate m osfets guangdong hottech industrial co,. ltd. typical characteristics BSS138 0 0.2 0.4 0.6 0.8 1 00.511.522.53 v ds , drain to source voltage (v) i d , drain current (a) v gs = 10v 2.0v 3.0v 2.5v 6.0v 4.5v 3.5v 0.6 1 1.4 1.8 2.2 2.6 3 3.4 0 0.2 0.4 0.6 0.8 1 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.5v 4.5v 3.0v 4.0v 3.5v 6.0v 10v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistanc e i d = 220ma v gs = 10v 0.5 1.1 1.7 2.3 2.9 3.5 4.1 0246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 110ma t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 0.1 0.2 0.3 0.4 0.5 0.6 0.511.522.533.5 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 10v 0.0001 0.001 0.01 0.1 1 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature.
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 220ma v ds = 8v 25v 30v 0 20 40 60 80 100 0 1020304050 v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.001 0.01 0.1 1 10 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 1s 100ms 100 s r ds(on) limit v gs = 10v single pulse r ja = 350 o c/w t a = 25 o c 10ms 1ms 0 1 2 3 4 5 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 350c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transien t thermal resistance r ja (t) = r(t) * r ja r ja = 350 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1a. transient thermal response will change depending on the circuit board design. p age:p - p plastic - encapsulate m osfets guangdong hottech industrial co,. ltd. typical characteristics BSS138
|
